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| TEC N 940525 Hologram Laser Hologram Laser(1 beam) for Magneto-Optical disk s Features (1) Maximum optical output: 35mW (2) Pickups reduced in size and weight on request (3) The housing of pickups shifted from aluminum die-cast to formed resin on request (reducing the weight to 1/3) (4) Since its semiconductor laser, signal detection photocell, and circuit array are assembled in a package, the optical pickup is simple in assembling and adjustment s LT0H12M Outline Dimensions (Unit: mm) 9.0 Hologram glass Cap glass 7.6 6.6 3.6 Z LD chip Reference surface s Applications (1) Magneto-optical disk drives (2) CD-Rs 10 - 0.45 4.9 0.4 5 6 7 4 45 45 3 8 X 2 1 10 9 Y 1.0 allowance = 0.2mm [Terminal connection] 3 4 Laser diode 8 10 G D1 Monitor photodiode D2 D3 D4 7 9 1 2 s Absolute Maximum Ratings Parameter Symbol Ratings Optical power output*1 PO 35 Laser 2 Reverse Monitor photodiode VR 30 voltage Photodiode for signal detection 15 Operating temperature*2 Topr -10 to +50 Storage temperature *2 Tstg -40 to +85 Soldering temperature *3 Tsol 260(5s or less) (Notice) Units mW V *1 Output power from LD chip *2 Case temperature *3 At the position of 1.6mm from the bottom face of resin package. C * In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. * Specifications are subject to change without notice for improvement. TEC N 940525 LT0H12M s Electro-optical Characteristics Parameter Threshold current Operating current Operating voltage Wavelength *2 Monitor current Laser (without hologram glass) Angle Radiation Characteristics *3 Emission Point accuracy Parallel Perpendicular (Tc=25C) Symbol Ith Iop Vop p Im // Condition Po =30mW *1 Po =30mW *1 ,VR=15V MIN 770 0.1 8 20. -20 -2 -3 -80 0.3 15 0.6 0.8 85 260 TYP 60 115 1.85 780 0.3 9.5 26 0.55 10 8 2.8 3 170 460 10 MAX 80 150 2.2 795 2 13 32 20 2 3 80 0.8 150 20 5 5.4 270 670 140 Units mA mA V nm mA % m mW/mA A/mW nA pF V nA pF nA ns Ripple // Angle Positon X,Y,Z S ID Ct VR Id Ct Isc PO =30mW *1 Differentioal efficiency Monitor Photodiode Sensitivity Dark current Terminal capacitance Reverse voltage Dark current Terminal capacitance Short circuit current *4 Response time *6 20mW Iop(30mW) - Iop(10mW) VR=15V IR=10A VR=15V VR=15V,f=1MHZ Ev=1000Lx *5 VR=15V,RL=180 A,B A,B A B A B A,B Photodiode for signal detection tr,tf Output power form LD chip Oscillation mode, transverse single mode An angle for 50% of the peak intensity (full angle at half maximum). Values in each element. Elements other than subject elements shall be measured while the anode and the cathode are short-circuited to each other *5 Illumination intensity by CIE standard light (Tungsten lamp) *6 Measuring method is shown below *1 *2 *3 *4 50% Input Laser diode =780nm Input Output RL=180 VR=15V Output 90% 10% tr *7 Applicabledivisions correspond to pattern segment No. Segment No. D2,D3 ******* A D1,D4 ******* B tf D1 D2 D3 D4 TEC N 940525 LT0H12M s Electro-optical Characteristics *1 Parameter Focus error signal offsetting *2 Lead-in for focus error signal *3 Radial offsetting *4 FES Output amplitude *5 RES Output amplitude *5 Condition MIN -20 -10 2.4 2.5 TYP -12 90 3.9 3.3 (Tc=25C) MAX Units -4 % m 10 % 5.0 A p-p 4.1 A p-p Laser output 4.2mW *1 Measuring method is shown below. Actuator Laser Driver HL NA=0.35 f=6.0mm NA=0.5 f=3.45mm MO Disk C.L. O.L * Distance between C.L-O.L: 27mm C.L: Collimator lens O.L: Objective lens Measuring method of electro-optical characteristics *2 FES output (a)/FESp-p at Maximum point of the FES output amplitude *3 GND a FESp-p GND *4 (a-b)/2(a+b) a GND b *5 Values at 4.2mW of the laser output Both FES output amplitude (D2-D3) and RES output amplitude (D1-D4) are p-p values at focusing oscillation *4 (a-b)/ (a+b) a b |
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